Dynamic Random Access Memory (DRAM) is found in computers, mobile phones, portable devices and video games consoles. It contains information in the form of electric charge stored on a capacitator that can quickly save accessible data in the logic states 0 and 1.
Researchers at IBM have now developed the fastest DRAM cell in the world, writes a statement. It has a gate length of 14 nanometers, promises low-power memory, and is particularly suited to implementation in mobile devices or as cache memory. Scientists from IBM Research in Rüschlikon played a role in the EU-funded project, by producing the transistors, which were then electrically characterized at the University of Granada in Spain.
IBM Research in Rüschlikon was founded in 1956 as the first IBM laboratory outside the USA. Today it is one of 12 IBM sites with a research laboratory. Its spectrum of research activities ranges from nano technology to the development of future generations of computer systems and memory technology, all the way to cloud computing, data protection, supercomputing and simulation, big data analytics and cognitive computing.